دیتاشیت FGA40N65SMD
								
							
							
								
								
									
										مشخصات دیتاشیت
										
											
												
													| نام دیتاشیت | 
													
														FGA40N65SMD
													 | 
												
												
													| حجم فایل | 
													
														
															70.016
																کیلوبایت
														 | 
														
												
												
													| نوع فایل | 
													
														
															pdf
														 | 
														
												
												
													| تعداد صفحات | 
													
														
															11
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مشخصات
					
					
						
							
									
										
											- 
												
													RoHS:
												
												
													true
												
											
 
											
											- 
												
													Type:
												
												
													Field Stop
												
											
 
											
											- 
												
													Category:
												
												
													Triode/MOS Tube/Transistor/IGBTs
												
											
 
											
											- 
												
													Datasheet:
												
												
													onsemi FGA40N65SMD
												
											
 
											
											- 
												
													Operating Temperature:
												
												
													-55°C~+175°C@(Tj)
												
											
 
											
											- 
												
													Collector Current (Ic):
												
												
													80A
												
											
 
											
											- 
												
													Power Dissipation (Pd):
												
												
													349W
												
											
 
											
											- 
												
													Turn?on Delay Time (Td(on)):
												
												
													12ns
												
											
 
											
											- 
												
													Input Capacitance (Cies@Vce):
												
												
													-
												
											
 
											
											- 
												
													Turn?on Switching Loss (Eon):
												
												
													0.82mJ
												
											
 
											
											- 
												
													Total Gate Charge (Qg@Ic,Vge):
												
												
													119nC
												
											
 
											
											- 
												
													Turn?off Delay Time (Td(off)):
												
												
													92ns
												
											
 
											
											- 
												
													Pulsed Collector Current (Icm):
												
												
													120A
												
											
 
											
											- 
												
													Turn?off Switching Loss (Eoff):
												
												
													0.26mJ
												
											
 
											
											- 
												
													Diode Reverse Recovery Time (Trr):
												
												
													42ns
												
											
 
											
											- 
												
													Collector-Emitter Breakdown Voltage (Vces):
												
												
													650V
												
											
 
											
											- 
												
													Gate-Emitter Threshold Voltage (Vge(th)@Ic):
												
												
													2.5V@15V,40A
												
											
 
											
											- 
												
													Package:
												
												
													TO-3P
												
											
 
											
											- 
												
													Manufacturer:
												
												
													onsemi